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1 Ergebnisse
1
Impact of Substrate Termination on Dynamic On-State Charact..:
, In:
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Kuring, Carsten
;
Wieczorek, Nick
;
Hilt, Oliver
... - p. 824-831 , 2019
Link:
https://doi.org/10.1109/ECCE.2019.8912793
RT T1 <cTitle>2019 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8912793&Exemplar=1&LAN=DE A1 Kuring, Carsten A1 Wieczorek, Nick A1 Hilt, Oliver A1 Wolf, Mihaela A1 Bocker, Jan A1 Wurfl, Joachim A1 Dieckerhoff, Sibylle YR 2019 SN 2329-3748 K1 Gallium nitride K1 Substrates K1 HEMTs K1 Switches K1 Resistance K1 Logic gates K1 Gallium Nitride K1 bidirectional K1 integration K1 switching characteristics K1 dynamic on-state resistance K1 power semiconductor device K1 semiconductor K1 multi-level inverter K1 T-type inverter SP 824 OP 831 LK http://dx.doi.org/https://doi.org/10.1109/ECCE.2019.8912793 DO https://doi.org/10.1109/ECCE.2019.8912793 SF ELIB - SuUB Bremen
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