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Impact of substrate bias on the mobility of n-type ɷ-gate S..:
, In:
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)
,
Bergamaschi, Flavio Enrico
;
Barraud, Sylvain
;
Casse, Mikael
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/SBMicro.2019.8919463
RT T1
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)
: T1
Impact of substrate bias on the mobility of n-type ɷ-gate SOI nanowire MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-8919463&Exemplar=1&LAN=DE A1 Bergamaschi, Flavio Enrico A1 Barraud, Sylvain A1 Casse, Mikael A1 Vinet, Maud A1 Faynot, Olivier A1 Paz, Bruna Cardoso A1 Pavanello, Marcelo Antonio YR 2019 K1 Logic gates K1 Substrates K1 Scattering K1 Threshold voltage K1 Degradation K1 Transistors K1 Silicon K1 substrate bias K1 mobility K1 nanowire K1 SOI MOSFET SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SBMicro.2019.8919463 DO https://doi.org/10.1109/SBMicro.2019.8919463 SF ELIB - SuUB Bremen
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