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1 Ergebnisse
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Iron-Induced Acceptor Centers in the Gallium Nitride High E..:
, In:
2019 International Conference on Advanced Technologies for Communications (ATC)
,
Ha, Dao Dinh
;
Tuan, Trung Tran
;
Volcheck, Vladislav
. - p. 308-312 , 2019
Link:
https://doi.org/10.1109/ATC.2019.8924506
RT T1
2019 International Conference on Advanced Technologies for Communications (ATC)
: T1
Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis
UL https://suche.suub.uni-bremen.de/peid=ieee-8924506&Exemplar=1&LAN=DE A1 Ha, Dao Dinh A1 Tuan, Trung Tran A1 Volcheck, Vladislav A1 Stempitsky, Viktor YR 2019 SN 2162-1039 K1 Gallium nitride K1 Mathematical model K1 Aluminum gallium nitride K1 HEMTs K1 MODFETs K1 Wide band gap semiconductors K1 Heating systems SP 308 OP 312 LK http://dx.doi.org/https://doi.org/10.1109/ATC.2019.8924506 DO https://doi.org/10.1109/ATC.2019.8924506 SF ELIB - SuUB Bremen
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