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Investigation of a fast high-repetitive 10-kV SiC-MOSFET sw..:
, In:
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC)
,
Bischoff, Rainer
;
Stoll, Meik
;
Himmelsbach, Ralf
. - p. 200-203 , 2018
Link:
https://doi.org/10.1109/IPMHVC.2018.8936693
RT T1
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC)
: T1
Investigation of a fast high-repetitive 10-kV SiC-MOSFET switching module
UL https://suche.suub.uni-bremen.de/peid=ieee-8936693&Exemplar=1&LAN=DE A1 Bischoff, Rainer A1 Stoll, Meik A1 Himmelsbach, Ralf A1 Scharnholz, Sigo YR 2018 SN 2576-7283 K1 Optical switches K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Gate drivers K1 TV K1 pulsed-power K1 semiconductor switching K1 closing switches K1 SiC MOSFET K1 semiconductor protection methods SP 200 OP 203 LK http://dx.doi.org/https://doi.org/10.1109/IPMHVC.2018.8936693 DO https://doi.org/10.1109/IPMHVC.2018.8936693 SF ELIB - SuUB Bremen
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