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1 Ergebnisse
1
Analysis of Commercial GaN HEMTs in Overcurrent Operation:
, In:
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC)
,
Kim, Matthew
;
Rodriguez, Jose A.
;
Ray, William B.
... - p. 349-351 , 2018
Link:
https://doi.org/10.1109/IPMHVC.2018.8936768
RT T1
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC)
: T1
Analysis of Commercial GaN HEMTs in Overcurrent Operation
UL https://suche.suub.uni-bremen.de/peid=ieee-8936768&Exemplar=1&LAN=DE A1 Kim, Matthew A1 Rodriguez, Jose A. A1 Ray, William B. A1 Bayne, Stephen B. A1 O'Brien, Heather A1 Ogunniyi, Aderinto YR 2018 SN 2576-7283 K1 Gallium nitride K1 HEMTs K1 MODFETs K1 Silicon carbide K1 Resistors K1 Current measurement K1 Probes K1 GaN K1 gallium nitride K1 SiC K1 silicon carbide K1 high electronic mobility transistor K1 HEMT K1 wide-bandgap semiconductors K1 overcurrent operations SP 349 OP 351 LK http://dx.doi.org/https://doi.org/10.1109/IPMHVC.2018.8936768 DO https://doi.org/10.1109/IPMHVC.2018.8936768 SF ELIB - SuUB Bremen
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