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Charge Based Compact Modeling of Gate Leakage Mechanism in ..:
, In:
2018 4th IEEE International Conference on Emerging Electronics (ICEE)
,
Debnath, Ankur
;
Turuvekre, Sreenidhi
;
DasGupta, Nandita
. - p. 1-5 , 2018
Link:
https://doi.org/10.1109/ICEE44586.2018.8937997
RT T1 <cTitle>2018 4th IEEE International Conference on Emerging Electronics (ICEE)</cTitle>: T1 <Title>Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8937997&Exemplar=1&LAN=DE A1 Debnath, Ankur A1 Turuvekre, Sreenidhi A1 DasGupta, Nandita A1 DasGupta, Amitava YR 2018 K1 Logic gates K1 HEMTs K1 MODFETs K1 Aluminum gallium nitride K1 Wide band gap semiconductors K1 Leakage currents K1 Electric fields K1 AlGaN/GaN HEMT K1 charge based gate current model K1 comparison of model with temperature K1 parameter extraction SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/ICEE44586.2018.8937997 DO https://doi.org/10.1109/ICEE44586.2018.8937997 SF ELIB - SuUB Bremen
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