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Analysis of Electrical field in Uniformly doped Cylindrical..:
, In:
2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT)
,
Dargar, Abha
;
Srivastava, Viranjay M.
- p. 1-4 , 2019
Link:
https://doi.org/10.1109/ICCCNT45670.2019.8944882
RT T1
2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT)
: T1
Analysis of Electrical field in Uniformly doped Cylindrical Surrounding Double-Gate MOSFET
UL https://suche.suub.uni-bremen.de/peid=ieee-8944882&Exemplar=1&LAN=DE A1 Dargar, Abha A1 Srivastava, Viranjay M. YR 2019 K1 Electric fields K1 Logic gates K1 MOSFET K1 Capacitance K1 Capacitors K1 Electric potential K1 Metals K1 Short channel effects K1 Electric field K1 CSDG MOSFET K1 Oxide-capacitance K1 Microelectronics K1 Nanotechnology K1 VLSI SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICCCNT45670.2019.8944882 DO https://doi.org/10.1109/ICCCNT45670.2019.8944882 SF ELIB - SuUB Bremen
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