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1 Ergebnisse
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Comparison of NBTI kinetics in RMG Si p-FinFETs featuring A..:
, In:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Zhou, Longda
;
Luo, Ying
;
Simoen, Eddy
... - p. 1-6 , 2019
Link:
https://doi.org/10.1109/IPFA47161.2019.8984837
RT T1 <cTitle>2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)</cTitle>: T1 <Title>Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B2H6 and SiH4 Precursors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8984837&Exemplar=1&LAN=DE A1 Zhou, Longda A1 Luo, Ying A1 Simoen, Eddy A1 Yang, Hong A1 Yin, Huaxiang A1 Du, Anyan A1 Zhu, Huilong A1 Zhao, Chao A1 Wang, Wenwu A1 Ye, Tianchun A1 Wang, Guilei A1 Yin, Xiaogen A1 Tang, Bo A1 Liu, Qianqian A1 Ji, Zhigang A1 Xu, Hao A1 Kong, Zhenzhen A1 Jiang, Haojie YR 2019 SN 1946-1550 K1 ALD W filling metal K1 fluorine K1 strain K1 NBTI K1 p-FinFETs K1 high-k and metal gate (HKMG) SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IPFA47161.2019.8984837 DO https://doi.org/10.1109/IPFA47161.2019.8984837 SF ELIB - SuUB Bremen
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