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Breakdown Mechanism of AlGaN/GaN-based HFET With Carbon-dop..:

, In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA),
Ni, Yiqiang ; Li, Liuan ; He, Liang. - p. 1-5 , 2019
Link: https://doi.org/10.1109/IPFA47161.2019.8984853