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1 Ergebnisse
1
Reliability in Stacked Gate-All-Around Si Nanowire Devices:..:
, In:
2019 IEEE International Integrated Reliability Workshop (IIRW)
,
Chasin, Adrian
;
Horiguchi, Naoto
;
Linten, Dimitri
... - p. 1-8 , 2019
Link:
https://doi.org/10.1109/IIRW47491.2019.8989916
RT T1
2019 IEEE International Integrated Reliability Workshop (IIRW)
: T1
Reliability in Stacked Gate-All-Around Si Nanowire Devices: Time-Dependent Variability and Full Degradation Mapping
UL https://suche.suub.uni-bremen.de/peid=ieee-8989916&Exemplar=1&LAN=DE A1 Chasin, Adrian A1 Horiguchi, Naoto A1 Linten, Dimitri A1 Bury, Erik A1 Franco, Jacopo A1 Kaczer, Ben A1 Rzepa, Gerhard A1 Putcha, Vamsi A1 Weckx, Pieter A1 Ritzenthaler, Romain A1 Mertens, Hans YR 2019 SN 2374-8036 K1 FEOL reliability K1 PBTI/NBTI K1 HCI K1 GAA K1 time-dependent variability K1 scaling SP 1 OP 8 LK http://dx.doi.org/https://doi.org/10.1109/IIRW47491.2019.8989916 DO https://doi.org/10.1109/IIRW47491.2019.8989916 SF ELIB - SuUB Bremen
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