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1 Ergebnisse
1
Channel- & Drift Region's STI-Lengths Impacts of ESD Immuni..:
, In:
2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW)
,
Fan, Sheng-Kai
;
Chen, Shen-Li
;
Jhou, Yu-Lin
.. - p. 1-2 , 2019
Link:
https://doi.org/10.1109/ICCE-TW46550.2019.8991809
RT T1 <cTitle>2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW)</cTitle>: T1 <Title>Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8991809&Exemplar=1&LAN=DE A1 Fan, Sheng-Kai A1 Chen, Shen-Li A1 Jhou, Yu-Lin A1 Wu, Pei-Lin A1 Lin, Po-Lin YR 2019 SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-TW46550.2019.8991809 DO https://doi.org/10.1109/ICCE-TW46550.2019.8991809 SF ELIB - SuUB Bremen
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