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1 Ergebnisse
1
High-definition Visible-SWIR InGaAs Image Sensor using Cu-C..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Manda, S.
;
Matsumoto, R.
;
Saito, S.
... - p. 16.7.1-16.7.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993432
RT T1
2019 IEEE International Electron Devices Meeting (IEDM)
: T1
High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer
UL https://suche.suub.uni-bremen.de/peid=ieee-8993432&Exemplar=1&LAN=DE A1 Manda, S. A1 Matsumoto, R. A1 Saito, S. A1 Maruyama, S. A1 Minari, H. A1 Hirano, T. A1 Takachi, T. A1 Fujii, N. A1 Yamamoto, Y. A1 Zaizen, Y. A1 Hirano, T. A1 Iwamoto, H. YR 2019 SN 2156-017X K1 Image sensors K1 Temperature measurement K1 Dark current K1 Size measurement K1 Indium gallium arsenide K1 Silicon K1 Photodiodes SP 16.7.1 OP 16.7.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993432 DO https://doi.org/10.1109/IEDM19573.2019.8993432 SF ELIB - SuUB Bremen
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