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1 Ergebnisse
1
Impact Ionization Coefficients in GaN Measured by Above- an..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Maeda, Takuya
;
Narita, Tetsuo
;
Yamada, Shinji
... - p. 4.2.1-4.2.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993438
RT T1
2019 IEEE International Electron Devices Meeting (IEDM)
: T1
Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction
UL https://suche.suub.uni-bremen.de/peid=ieee-8993438&Exemplar=1&LAN=DE A1 Maeda, Takuya A1 Narita, Tetsuo A1 Yamada, Shinji A1 Kachi, Tetsu A1 Kimoto, Tsunenobu A1 Horita, Masahiro A1 Suda, Jun YR 2019 SN 2156-017X SP 4.2.1 OP 4.2.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993438 DO https://doi.org/10.1109/IEDM19573.2019.8993438 SF ELIB - SuUB Bremen
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