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First demonstration of field-free SOT-MRAM with 0.35 ns wri..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Honjo, H. ; Nguyen, T. V. A. ; Watanabe, T.... - p. 28.5.1-28.5.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993443