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Ge oxide scavenging and gate stack nitridation for strained..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Arimura, H. ; Wostyn, K. ; Ragnarsson, L.-A.... - p. 29.2.1-29.2.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993467