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1 Ergebnisse
1
Full Bottom Dielectric Isolation to Enable Stacked Nanoshee..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Zhang, J.
;
Frougier, J.
;
Greene, A.
... - p. 11.6.1-11.6.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993490
RT T1 <cTitle>2019 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8993490&Exemplar=1&LAN=DE A1 Zhang, J. A1 Frougier, J. A1 Greene, A. A1 Miao, X. A1 Yu, L. A1 Vega, R. A1 Montanini, P. A1 Durfee, C. A1 Gaul, A. A1 Pancharatnam, S. A1 Adams, C. A1 Wu, H. A1 Zhou, H. A1 Shen, T. A1 Xie, R. A1 Sankarapandian, M. A1 Wang, J. A1 Watanabe, K. A1 Bao, R. A1 Liu, X. A1 Park, C. A1 Shobha, H. A1 Joseph, P. A1 Kong, D. A1 De La Pena, A. Arceo A1 Li, J. A1 Conti, R. A1 Dechene, D. A1 Loubet, N. A1 Chao, R. A1 Yamashita, T. A1 Robison, R. A1 Basker, V. A1 Zhao, K. A1 Guo, D. A1 Haran, B. A1 Divakaruni, R. A1 Bu, H. YR 2019 SN 2156-017X SP 11.6.1 OP 11.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993490 DO https://doi.org/10.1109/IEDM19573.2019.8993490 SF ELIB - SuUB Bremen
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