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3D Scalable, Wake-up Free, and Highly Reliable FRAM Technol..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Lin, Y. D. ; Sheu, S. S. ; Hou, T. H.... - p. 15.3.1-15.3.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993504