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3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72n:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Oota, Masashi ; Hodo, Ryota ; Ikeda, Takayuki... - p. 3.2.1-3.2.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993506