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GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts a..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Bader, S. J. ; Chaudhuri, R. ; Hickman, A.... - p. 4.5.1-4.5.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993532