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First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAA..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Tu, Chien-Te ; Huang, Yu-Shiang ; Lu, Fang-Liang... - p. 29.3.1-29.3.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993537