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Complementary Memory Cell Based on Field-Programmable Ferro..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Luo, Qing ; Gong, Tiancheng ; Xu, Xiaoxin... - p. 38.5.1-38.5.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993545