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A Physics-based Model of RRAM Probabilistic Switching for G..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Zhao, Yudi ; Shen, Wensheng ; Huang, Peng... - p. 32.4.1-32.4.1 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993559