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5nm CMOS Production Technology Platform featuring full-fled..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Yeap, Geoffrey ; Chen, X. ; Yang, B. R.... - p. 36.7.1-36.7.4 , 2019

Link: https://doi.org/10.1109/IEDM19573.2019.8993577

RT 
T1 <cTitle>2019 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-8993577&Exemplar=1&LAN=DE
				
A1 Yeap, Geoffrey
A1 Chen, X.
A1 Yang, B. R.
A1 Lin, C. P.
A1 Yang, F. C.
A1 Leung, Y. K.
A1 Lin, D. W.
A1 Chen, C. P.
A1 Yu, K. F.
A1 Chen, D. H.
A1 Chang, C. Y.
A1 Lin, S. S.
A1 Chen, H. K.
A1 Hung, P.
A1 Hou, C. S.
A1 Cheng, Y. K.
A1 Chang, J.
A1 Yuan, L.
A1 Lin, C. K.
A1 Chen, C. C.
A1 Yeo, Y. C.
A1 Tsai, M. H.
A1 Chen, Y. M.
A1 Lin, H. T.
A1 Chui, C. O.
A1 Huang, K. B.
A1 Chang, W.
A1 Lin, H. J.
A1 Chen, K. W.
A1 Chen, R.
A1 Sun, S. H.
A1 Fu, Q.
A1 Yang, H. T.
A1 Shang, H. L.
A1 Chiang, H. T.
A1 Yeh, C. C.
A1 Lee, T. L.
A1 Wang, C. H.
A1 Shue, S. L.
A1 Wu, C. W.
A1 Lu, R.
A1 Lin, W. R.
A1 Wu, J.
A1 Lai, F.
A1 Wang, P. W.
A1 Wu, Y. H.
A1 Tien, B. Z.
A1 Huang, Y. C.
A1 Lu, L. C.
A1 He, Jun
A1 Ku, Y.
A1 Lin, J.
A1 Cao, M.
A1 Chang, T. S.
A1 Jang, S. M.
A1 Lin, H. C.
A1 Peng, Y. C.
A1 Sheu, J. Y.
A1 Wang, M.
YR 2019
SN 2156-017X
SP 36.7.1
OP 36.7.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993577
DO https://doi.org/10.1109/IEDM19573.2019.8993577
SF ELIB - SuUB Bremen

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