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Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Viey, A.G. ; Vandendaele, W. ; Jaud, M.-A.... - p. 4.3.1-4.3.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993588