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First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Comp..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Huang, Yu-Shiang ; Tsai, Chung-En ; Tu, Chien-Te... - p. 29.5.1-29.5.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993594