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Spin-transfer torque MRAM with reliable 2 ns writing for la..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Hu, G. ; Kim, D. ; Kim, J.... - p. 2.6.1-2.6.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993604