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1 Ergebnisse
1
A Novel Dry Selective Etch of SiGe for the Enablement of Hi..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Loubet, N.
;
Kal, S.
;
Alix, C.
... - p. 11.4.1-11.4.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993615
RT T1 <cTitle>2019 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8993615&Exemplar=1&LAN=DE A1 Loubet, N. A1 Kal, S. A1 Alix, C. A1 Pancharatnam, S. A1 Zhou, H. A1 Durfee, C. A1 Belyansky, M. A1 Haller, N. A1 Watanabe, K. A1 Devarajan, T. A1 Zhang, J. A1 Miao, X. A1 Sankar, M. A1 Breton, M. A1 Chao, R. A1 Greene, A. A1 Yu, L. A1 Frougier, J. A1 Chanemougame, D. A1 Tapily, K. A1 Smith, J. A1 Basker, V. A1 Mosden, A. A1 Biolsi, P. A1 Hurd, T. Q. A1 Divakaruni, R. A1 Haran, B. A1 Bu, H. YR 2019 SN 2156-017X SP 11.4.1 OP 11.4.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993615 DO https://doi.org/10.1109/IEDM19573.2019.8993615 SF ELIB - SuUB Bremen
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