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1 Ergebnisse
1
Modeling of switching speed and retention time in volatile ..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Wang, Wei
;
Covi, Erika
;
Lin, Yu-Hsuan
.. - p. 32.3.1-32.3.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993625
RT T1 <cTitle>2019 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8993625&Exemplar=1&LAN=DE A1 Wang, Wei A1 Covi, Erika A1 Lin, Yu-Hsuan A1 Ambrosi, Elia A1 Ielmini, Daniele YR 2019 SN 2156-017X SP 32.3.1 OP 32.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993625 DO https://doi.org/10.1109/IEDM19573.2019.8993625 SF ELIB - SuUB Bremen
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