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Low Von 17kV SiC IGBT assisted n-MOS Thyristor:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Matsunaga, S. ; Mizushima, T. ; Takenaka, K.... - p. 20.2.1-20.2.4 , 2019
Link: https://doi.org/10.1109/IEDM19573.2019.8993648