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1 Ergebnisse
1
3D Semicircular Flash Memory Cell: Novel Split-Gate Technol..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Fujiwara, M.
;
Morooka, T.
;
Nagashima, S.
... - p. 28.1.1-28.1.4 , 2019
Link:
https://doi.org/10.1109/IEDM19573.2019.8993673
RT T1 <cTitle>2019 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>3D Semicircular Flash Memory Cell: Novel Split-Gate Technology to Boost Bit Density</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8993673&Exemplar=1&LAN=DE A1 Fujiwara, M. A1 Morooka, T. A1 Nagashima, S. A1 Kato, T. A1 Fukuda, N. A1 Kariya, N. A1 Ogura, T. A1 Kurusu, T. A1 Shimada, Y. A1 Ishikawa, T. A1 Arayashiki, Y. A1 Hirayama, K. A1 Koyama, Y. A1 Kashiyama, S. A1 Cai, W. A1 Goki, Y. A1 Sawa, K. A1 Ikeno, D. A1 Nishikawa, M. A1 Uchiyama, Y. A1 Ohtani, N. A1 Arai, F. A1 Kondo, M. YR 2019 SN 2156-017X K1 Electron traps K1 Three-dimensional displays K1 Nonvolatile memory K1 Stacking K1 Split gate flash memory cells K1 Electron devices SP 28.1.1 OP 28.1.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19573.2019.8993673 DO https://doi.org/10.1109/IEDM19573.2019.8993673 SF ELIB - SuUB Bremen
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