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1 Ergebnisse
1
Detailed Study of Breakdown Voltage and Critical Field in W..:
, In:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
,
Nouketcha, F.
;
Lelis, A.
;
Green, R.
... - p. 200-207 , 2019
Link:
https://doi.org/10.1109/WiPDA46397.2019.8998828
RT T1
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
: T1
Detailed Study of Breakdown Voltage and Critical Field in Wide Bandgap Semiconductors
UL https://suche.suub.uni-bremen.de/peid=ieee-8998828&Exemplar=1&LAN=DE A1 Nouketcha, F. A1 Lelis, A. A1 Green, R. A1 Cui, Y. A1 Darmody, C. A1 Goldsman, N. YR 2019 K1 Mathematical model K1 Impact ionization K1 Electric fields K1 PIN photodiodes K1 Doping K1 Gallium nitride K1 Silicon K1 Impact ionization coefficients K1 critical thickness K1 critical field K1 triangular field profile K1 trapezoidal field profile SP 200 OP 207 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA46397.2019.8998828 DO https://doi.org/10.1109/WiPDA46397.2019.8998828 SF ELIB - SuUB Bremen
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