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1 Ergebnisse
1
Physics Based TCAD Simulation and Calibration of GaN/AlGaN/..:
, In:
2019 6th International Conference on Systems and Informatics (ICSAI)
,
Reddy, Manoj Kumar
;
Lakshmi, Jhansi
;
Hemanth, Atluri
... - p. 253-256 , 2019
Link:
https://doi.org/10.1109/ICSAI48974.2019.9010496
RT T1 <cTitle>2019 6th International Conference on Systems and Informatics (ICSAI)</cTitle>: T1 <Title>Physics Based TCAD Simulation and Calibration of GaN/AlGaN/GaN HEMT Device</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9010496&Exemplar=1&LAN=DE A1 Reddy, Manoj Kumar A1 Lakshmi, Jhansi A1 Hemanth, Atluri A1 Kumar, Bhajantri Hemanth A1 Bandi, Lavanya A1 Sheu, Gene A1 Song, Yu-Lin A1 Chen, Po-An A1 Chang, Luh-Maan YR 2019 K1 Gallium nitride K1 HEMTs K1 Electron traps K1 Wide band gap semiconductors K1 Aluminum gallium nitride K1 Logic gates K1 Silicon K1 TCAD (Technology Computer Aided Design) K1 GaN HEMT (High Electron Mobility Transistor) K1 fixed charge K1 donor like traps K1 energy level SP 253 OP 256 LK http://dx.doi.org/https://doi.org/10.1109/ICSAI48974.2019.9010496 DO https://doi.org/10.1109/ICSAI48974.2019.9010496 SF ELIB - SuUB Bremen
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