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Comparison of leakage currents in the power supply bulk and..:
, In:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
,
Ilnitsky, Mikhail
;
Vdovin, Vladimir
;
Egorkin, Andrey
... - p. 1-3 , 2019
Link:
https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041886
RT T1 <cTitle>2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)</cTitle>: T1 <Title>Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9041886&Exemplar=1&LAN=DE A1 Ilnitsky, Mikhail A1 Vdovin, Vladimir A1 Egorkin, Andrey A1 Antonov, Valentin A1 Tyschenko, Ida A1 Zarubanov, Alexander A1 Popov, Vladimir A1 Glukhov, Alexander YR 2019 SN 2472-9132 K1 thick SOI layer K1 power supply MOSFETs K1 leakage currents K1 defect engeeniring SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041886 DO https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041886 SF ELIB - SuUB Bremen
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