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TCAD Simulation of Total Ionizing Dose Response on DSOI nMO..:
, In:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
,
Huang, Yang
;
Li, Binhong
;
Cristoloveanu, Sorin
... - p. 1-5 , 2019
Link:
https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041900
RT T1 <cTitle>2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)</cTitle>: T1 <Title>TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9041900&Exemplar=1&LAN=DE A1 Huang, Yang A1 Li, Binhong A1 Cristoloveanu, Sorin A1 Li, Bo A1 Shen, Chen A1 Song, Yanfu A1 Wang, Lei A1 Li, Duoli A1 Liu, Hainan A1 Han, Zhengsheng A1 Luo, Jiajun YR 2019 SN 2472-9132 K1 Radiation effects K1 Semiconductor process modeling K1 MOSFET circuits K1 Integrated circuit modeling K1 Logic gates K1 Electrodes K1 Performance evaluation K1 double-SOI K1 total ionizing dose K1 MOSFET K1 TCAD simulation SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041900 DO https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041900 SF ELIB - SuUB Bremen
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