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1 Ergebnisse
1
Electrical Performances of Insulated Gated Bipolar Transist..:
, In:
2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII)
,
Yang, Hsin-Chia
;
Lo, Kuo-Chin
;
Yu, Hsiu-Hsien
... - p. 415-417 , 2019
Link:
https://doi.org/10.1109/ICKII46306.2019.9042668
RT T1 <cTitle>2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII)</cTitle>: T1 <Title>Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9042668&Exemplar=1&LAN=DE A1 Yang, Hsin-Chia A1 Lo, Kuo-Chin A1 Yu, Hsiu-Hsien A1 Chang, Chun-Yian A1 Liao, Kun-Hong A1 Liao, Yu-Jung A1 Chi, Sung-Ching YR 2019 K1 IGBT K1 Trans-conductance K1 Swing K1 Breakdown Voltage SP 415 OP 417 LK http://dx.doi.org/https://doi.org/10.1109/ICKII46306.2019.9042668 DO https://doi.org/10.1109/ICKII46306.2019.9042668 SF ELIB - SuUB Bremen
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