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3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Vo..:

, In: 2020 IEEE International Solid- State Circuits Conference - (ISSCC),
Liao, Chenu-Hsing ; Yang, Shang-Hsien ; Liao, Meng-Yin... - p. 72-74 , 2020
Link: https://doi.org/10.1109/ISSCC19947.2020.9062940