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1 Ergebnisse
1
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M..:
, In:
2020 IEEE International Solid- State Circuits Conference - (ISSCC)
,
Chih, Yu-Der
;
Shih, Yi-Chun
;
Lee, Chia-Fu
... - p. 222-224 , 2020
Link:
https://doi.org/10.1109/ISSCC19947.2020.9062955
RT T1
2020 IEEE International Solid- State Circuits Conference - (ISSCC)
: T1
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference
UL https://suche.suub.uni-bremen.de/peid=ieee-9062955&Exemplar=1&LAN=DE A1 Chih, Yu-Der A1 Shih, Yi-Chun A1 Lee, Chia-Fu A1 Chang, Yen-An A1 Lee, Po-Hao A1 Lin, Hon-Jarn A1 Chen, Yu-Lin A1 Lo, Chieh-Pu A1 Shih, Meng-Chun A1 Shen, Kuei-Hung A1 Chuang, Harry A1 Chang, Tsung-Yung Jonathan YR 2020 SN 2376-8606 K1 Magnetic shielding K1 Magnetic noise K1 Voltage control K1 Interference K1 Charge pumps K1 Generators K1 Sensors SP 222 OP 224 LK http://dx.doi.org/https://doi.org/10.1109/ISSCC19947.2020.9062955 DO https://doi.org/10.1109/ISSCC19947.2020.9062955 SF ELIB - SuUB Bremen
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