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5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensi..:

, In: 2020 IEEE International Solid- State Circuits Conference - (ISSCC),

Lee, Jae-Kyu ; Kim, Seung Sik ; Baek, In-Gyu... - p. 102-104 , 2020

Link: https://doi.org/10.1109/ISSCC19947.2020.9063092

RT 
T1 <cTitle>2020 IEEE International Solid- State Circuits Conference - (ISSCC)</cTitle>: T1 <Title>5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9063092&Exemplar=1&LAN=DE
				
A1 Lee, Jae-Kyu
A1 Kim, Seung Sik
A1 Baek, In-Gyu
A1 Shim, Heesung
A1 Kim, Taehoon
A1 Kim, Taehyoung
A1 Kyoung, Jungchan
A1 Im, Dongmo
A1 Choi, Jinyong
A1 Cho, KeunYeong
A1 Kim, Daehoon
A1 Lim, Haemin
A1 Seo, Min-Woong
A1 Kim, JuYoung
A1 Kwon, Doowon
A1 Song, Jiyoun
A1 Kim, Jiyoon
A1 Jang, Minho
A1 Moon, Joosung
A1 Kim, HyunChul
A1 Chang, Chong Kwang
A1 Kim, JinGyun
A1 Koh, Kyoungmin
A1 Lim, HanJin
A1 Ahn, JungChak
A1 Hong, Hyeongsun
A1 Lee, Kyupil
A1 Kang, Ho-Kyu
YR 2020
SN 2376-8606
K1 Capacitors
K1 Transistors
K1 CMOS image sensors
K1 Sensitivity
K1 Capacitance
K1 Silicon
SP 102
OP 104
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC19947.2020.9063092
DO https://doi.org/10.1109/ISSCC19947.2020.9063092
SF ELIB - SuUB Bremen

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