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13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with ..:

, In: 2020 IEEE International Solid- State Circuits Conference - (ISSCC),

Huh, Hwang ; Cho, Wanik ; Lee, Jinhaeng... - p. 220-221 , 2020

Link: https://doi.org/10.1109/ISSCC19947.2020.9063117

RT 
T1 <cTitle>2020 IEEE International Solid- State Circuits Conference - (ISSCC)</cTitle>: T1 <Title>13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9063117&Exemplar=1&LAN=DE
				
A1 Huh, Hwang
A1 Cho, Wanik
A1 Lee, Jinhaeng
A1 Noh, Yujong
A1 Park, Yongsoon
A1 Ok, Sunghwa
A1 Kim, Jongwoo
A1 Cho, Kayoung
A1 Lee, Hyunchul
A1 Kim, Geonu
A1 Park, Kangwoo
A1 Kim, Kwanho
A1 Lee, Heejoo
A1 Chai, Sooyeol
A1 Kwon, Chankeun
A1 Cho, Hanna
A1 Jeong, Chanhui
A1 Yang, Yujin
A1 Goo, Jayoon
A1 Park, Jangwon
A1 Lee, Juhyeong
A1 Kirr, Heonki
A1 Jo, Kangwook
A1 Park, Cheoljoong
A1 Nam, Hyeonsu
A1 Song, Hyunseok
A1 Lee, Sangkyu
A1 Jeong, Woopyo
A1 Ahn, Kun-Ok
A1 Jung, Tae-Sung
YR 2020
SN 2376-8606
K1 Sensors
K1 Computer architecture
K1 Microprocessors
K1 Three-dimensional displays
K1 Couplings
K1 Flash memories
K1 Throughput
SP 220
OP 221
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC19947.2020.9063117
DO https://doi.org/10.1109/ISSCC19947.2020.9063117
SF ELIB - SuUB Bremen

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