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1 Ergebnisse
1
Self-Heating Analysis of GaN-HEMT for Various Ambient Tempe..:
, In:
2020 5th International Conference on Devices, Circuits and Systems (ICDCS)
,
Arivazhagan, L.
;
Mohammed Jarndal, Anwar Hasan
;
Chander, Subhash
... - p. 267-270 , 2020
Link:
https://doi.org/10.1109/ICDCS48716.2020.243595
RT T1 <cTitle>2020 5th International Conference on Devices, Circuits and Systems (ICDCS)</cTitle>: T1 <Title>Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9075510&Exemplar=1&LAN=DE A1 Arivazhagan, L. A1 Mohammed Jarndal, Anwar Hasan A1 Chander, Subhash A1 Godfrey, D. A1 Kumar J.S., Raj A1 Bhagyalakshmi, S. A1 Reddy, Pavan Kumar A1 Nirmal, D. YR 2020 SN 2644-1802 K1 Substrates K1 Logic gates K1 Temperature measurement K1 HEMTs K1 Aluminum gallium nitride K1 Wide band gap semiconductors K1 Temperature K1 Self-heating K1 GaN K1 HEMT K1 Reliability K1 Substrate K1 Ambient Temperature K1 Kink Effect SP 267 OP 270 LK http://dx.doi.org/https://doi.org/10.1109/ICDCS48716.2020.243595 DO https://doi.org/10.1109/ICDCS48716.2020.243595 SF ELIB - SuUB Bremen
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