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1 Ergebnisse
1
Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvola..:
, In:
2020 IEEE International Memory Workshop (IMW)
,
Wang, Y. Z.
;
Amo, A.
;
Maekawa, K.
... - p. 1-4 , 2020
Link:
https://doi.org/10.1109/IMW48823.2020.9108134
RT T1
2020 IEEE International Memory Workshop (IMW)
: T1
Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash
UL https://suche.suub.uni-bremen.de/peid=ieee-9108134&Exemplar=1&LAN=DE A1 Wang, Y. Z. A1 Amo, A. A1 Maekawa, K. A1 Uchimura, K. A1 Sonoda, K. A1 Ogura, R. A1 Kimura, S. A1 Saito, T. A1 Maruyama, T. A1 Inoue, M. A1 Yanagita, H. A1 Yamashita, T. YR 2020 SN 2573-7503 K1 high-k trapping layer K1 charge-trapping nonvolatile memory K1 hafnium silicon oxide K1 split-gate K1 SONOS K1 blocking layer structure SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IMW48823.2020.9108134 DO https://doi.org/10.1109/IMW48823.2020.9108134 SF ELIB - SuUB Bremen
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