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1
Comparative Studies of Electrical Properties of MFS and MIS..:
, In:
2020 International Conference on Electrical and Electronics Engineering (ICE3)
,
Singh, Amit
;
Meena, Lakshya Kumar
;
Dhawale, Vishvajeet Vasantrao
... - p. 131-135 , 2020
Link:
https://doi.org/10.1109/ICE348803.2020.9122867
RT T1 <cTitle>2020 International Conference on Electrical and Electronics Engineering (ICE3)</cTitle>: T1 <Title>Comparative Studies of Electrical Properties of MFS and MIS Capacitors for Non-Volatile Memory Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9122867&Exemplar=1&LAN=DE A1 Singh, Amit A1 Meena, Lakshya Kumar A1 Dhawale, Vishvajeet Vasantrao A1 Singhal, Satyam A1 Singh, Sanjai A1 Yadav, Shekhar YR 2020 K1 metal-insulator-semiconductor (mis) K1 memory window K1 metal-ferroelectric-semiconductor (mfs) K1 ferroelectric thin film K1 leakage current K1 remnant polarization K1 coercive field K1 spontaneous polarization SP 131 OP 135 LK http://dx.doi.org/https://doi.org/10.1109/ICE348803.2020.9122867 DO https://doi.org/10.1109/ICE348803.2020.9122867 SF ELIB - SuUB Bremen
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