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The Influence of Gate Bias on the Anneal of Hot-Carrier Deg..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Vandemaele, Michiel
;
Chuang, Kai-Hsin
;
Bury, Erik
... - p. 1-7 , 2020
Link:
https://doi.org/10.1109/IRPS45951.2020.9128218
RT T1 <cTitle>2020 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9128218&Exemplar=1&LAN=DE A1 Vandemaele, Michiel A1 Chuang, Kai-Hsin A1 Bury, Erik A1 Tyaginov, Stanislav A1 Groeseneken, Guido A1 Kaczer, Ben YR 2020 SN 1938-1891 K1 Hot-carrier degradation K1 anneal K1 recovery K1 Pb-centers SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS45951.2020.9128218 DO https://doi.org/10.1109/IRPS45951.2020.9128218 SF ELIB - SuUB Bremen
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