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1 Ergebnisse
1
Comparison of variability of HCI induced drift for SiON and..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Federspiel, X.
;
Diouf, C.
;
Cacho, F.
. - p. 1-5 , 2020
Link:
https://doi.org/10.1109/IRPS45951.2020.9128326
RT T1 <cTitle>2020 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Comparison of variability of HCI induced drift for SiON and HKMG devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9128326&Exemplar=1&LAN=DE A1 Federspiel, X. A1 Diouf, C. A1 Cacho, F. A1 Vincent, E. YR 2020 SN 1938-1891 K1 CMOS K1 HCI K1 variability K1 reliability SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS45951.2020.9128326 DO https://doi.org/10.1109/IRPS45951.2020.9128326 SF ELIB - SuUB Bremen
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