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Specific aspects regarding evaluation of power cycling test..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Gerlach, Martina
;
Seidel, Peter
;
Lutz, Josef
- p. 1-6 , 2020
Link:
https://doi.org/10.1109/IRPS45951.2020.9129128
RT T1 <cTitle>2020 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Specific aspects regarding evaluation of power cycling tests with SiC devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9129128&Exemplar=1&LAN=DE A1 Gerlach, Martina A1 Seidel, Peter A1 Lutz, Josef YR 2020 SN 1938-1891 K1 Bipolar degradation K1 gate oxide K1 SiC MOSFET K1 Power Cycling SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS45951.2020.9129128 DO https://doi.org/10.1109/IRPS45951.2020.9129128 SF ELIB - SuUB Bremen
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