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1 Ergebnisse
1
Study of the Walk-Out Effect of Junction Breakdown Instabil..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Lo, Chieh Roger
;
Yeh, Teng-Hao
;
Chen, Wei-Chen
... - p. 1-6 , 2020
Link:
https://doi.org/10.1109/IRPS45951.2020.9129216
RT T1 <cTitle>2020 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9129216&Exemplar=1&LAN=DE A1 Lo, Chieh Roger A1 Yeh, Teng-Hao A1 Chen, Wei-Chen A1 Lue, Hang-Ting A1 Wang, Keh-Chung A1 Lu, Chih-Yuan A1 Chang, Yao-Wen A1 Chen, Yung-Hsiang A1 Liu, Chu-Yung A1 Lu, Chih-Yuan YR 2020 SN 1938-1891 K1 Word-line drive of NAND Flash K1 depletion mode MOSFET K1 walk-out/walk-in effect K1 source/drainoffset layout SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS45951.2020.9129216 DO https://doi.org/10.1109/IRPS45951.2020.9129216 SF ELIB - SuUB Bremen
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