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1 Ergebnisse
1
Non-Intrusive Methodologies for Characterization of Bias Te..:
, In:
2020 IEEE International Reliability Physics Symposium (IRPS)
,
Gonzalez, Jose Ortiz
;
Alatise, Olayiwola
;
Mawby, Phil
- p. 1-10 , 2020
Link:
https://doi.org/10.1109/IRPS45951.2020.9129637
RT T1
2020 IEEE International Reliability Physics Symposium (IRPS)
: T1
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9129637&Exemplar=1&LAN=DE A1 Gonzalez, Jose Ortiz A1 Alatise, Olayiwola A1 Mawby, Phil YR 2020 SN 1938-1891 K1 SiC MOSFETs K1 Gate Oxide Reliability K1 Bias Temperature Instability SP 1 OP 10 LK http://dx.doi.org/https://doi.org/10.1109/IRPS45951.2020.9129637 DO https://doi.org/10.1109/IRPS45951.2020.9129637 SF ELIB - SuUB Bremen
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