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The influence of the gate trench orientation to the crystal..:
, In:
2020 Device Research Conference (DRC)
,
Treidel, E. Bahat
;
Hilt, O.
;
Christopher, H.
... - p. 1-2 , 2020
Link:
https://doi.org/10.1109/DRC50226.2020.9135182
RT T1
2020 Device Research Conference (DRC)
: T1
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
UL https://suche.suub.uni-bremen.de/peid=ieee-9135182&Exemplar=1&LAN=DE A1 Treidel, E. Bahat A1 Hilt, O. A1 Christopher, H. A1 Klehr, A. A1 Ginolas, A. A1 Liero, A. A1 Wurfl, J. YR 2020 SN 2640-6853 SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/DRC50226.2020.9135182 DO https://doi.org/10.1109/DRC50226.2020.9135182 SF ELIB - SuUB Bremen
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