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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs b..:
, In:
2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184)
,
Dutta, Ritam
;
Tamang, Tenzing
;
Paul, Pranoy
. - p. 137-142 , 2020
Link:
https://doi.org/10.1109/ICOEI48184.2020.9142891
RT T1 <cTitle>2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184)</cTitle>: T1 <Title>Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9142891&Exemplar=1&LAN=DE A1 Dutta, Ritam A1 Tamang, Tenzing A1 Paul, Pranoy A1 Paitya, Nitai YR 2020 K1 HEMTs K1 MODFETs K1 Gallium nitride K1 Gallium arsenide K1 Performance evaluation K1 Aluminum gallium nitride K1 Electric potential K1 Aluminum gallium nitride/gallium nitride (AlGaN/GaN) K1 Indium aluminum nitride/galium nitride (InAlN/GaN) K1 Aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) K1 HEMT K1 T-CAD SP 137 OP 142 LK http://dx.doi.org/https://doi.org/10.1109/ICOEI48184.2020.9142891 DO https://doi.org/10.1109/ICOEI48184.2020.9142891 SF ELIB - SuUB Bremen
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