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1 Ergebnisse
1
Lateral charge partitioning across the internal base resist..:
, In:
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
,
Salvato, R.
;
Krattenmacher, M.
;
Rubino, C.
.. - p. 1-4 , 2020
Link:
https://doi.org/10.1109/EuroSimE48426.2020.9152736
RT T1
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
: T1
Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effect in SiGe HBTs during large signal switching
UL https://suche.suub.uni-bremen.de/peid=ieee-9152736&Exemplar=1&LAN=DE A1 Salvato, R. A1 Krattenmacher, M. A1 Rubino, C. A1 d'Alessandro, V. A1 Schroter, M. YR 2020 K1 Integrated circuit modeling K1 Computational modeling K1 Transistors K1 Resistance K1 Switches K1 Solid modeling SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/EuroSimE48426.2020.9152736 DO https://doi.org/10.1109/EuroSimE48426.2020.9152736 SF ELIB - SuUB Bremen
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